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University of Cambridge > Department of Materials Science > Device Materials Group
       
Mark Blamire
   

Group Location

Internal Information

 
  Professor of Device Materials
office: 
114, Annexe
telephone: 
+44 (0) 1223 334359
email: 
mb52@cam.ac.uk
Recent Publications:
 
 

J. Dho, X. Qi, J. L. MacManus-Driscoll, M. G. Blamire, and H. Kim, "Large Electric Polarisation and Exchange Bias in Multiferroic BiFeO 3 " Adv. Mats. 18 , 1445-1448 (2006).

A. Palau, J.H. Durrell, J. L. MacManus-Driscoll, S. Harrington, T. Puig, X. Obradors, and M. G. Blamire, "Cross-over between channeling and pinning at twin boundaries in YBa 2 Cu 3 O 7 thin films" Phys. Rev. Lett. 97 , 257002 (2006).

J.W.A. Robinson, S. Piano, G. Burnell, C. Bell, and M.G. Blamire, "Critical Current Oscillations in Strong Ferromagnetic Pi-Junctions" Phys. Rev. Lett. 97 , 177003 (2006).

M. G. Blamire, M. Ali, C.-W. Leung, C. H. Marrows, and B. J. Hickey, "Exchange Bias and Blocking Temperature in Co/FeMn/CuNi Trilayers" Phys. Rev. Lett. 98 , 217202 (2007).

A. Palau, H. Parvaneh, N.A. Stelmashenko, H. Wang, J. L. Macmanus-Driscoll, and M.G. Blamire, "Hysteretic vortex pinning in superconductor / ferromagnet nanocomposites" Phys.Rev. Lett. 98 , 117003 (2007).

 
 
Dept web page    
Research interests      

My research is based on the study of novel materials or new materials combinations for potential device applications. These materials include metals, oxides, nitrides with properties which include superconductivity, magnetism and ferroelectricity. This work makes use of the Group's thin film deposition facility and often requires the equipment within   the University Nanoscience Centre for device fabrication.

 

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These figures show how we fabricate devices using our focused ion beam system to enable the measurement of the resistance of metallic heterostructures perpendicular to the film plane. Such devices need to be submicron to give resistances which can be measured easily.The figure above shows a schematic of the deposition process used to grow our heterostructures using ultra-high vacuum deposition. The left image shows the processing route (see Bell, et al., Nanotechnology 14, 630 (2003).) and the right image a micrograph of a completed device to measure the out-of-plane spin diffusion length of copper (see Leung, et al., Phys. Rev. B 72, 212409 (2005).)

This process is used to create many of the devices reported in our recent papers.

I am also Vice-President of Hughes Hall.

         
         
         
  Last modified: 31/01/12 17:47