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Wednesday, 29 November, 2017 - 10:00
Event Location: 

Goldsmiths Lecture Room 1

Seminar by Professor E. Towe, Carnegie Mellon University, Pittsburgh, PA 15213

Abstract: Synthesis of semiconductor thin films by molecular beam epitaxy has enabled the creation of artificial heterostructures with unique engineered properties for fundamental investigations as well as practical applications in electronic and photonic devices.  This presentation will discuss use of liquid-metal-enabled molecular beam epitaxy for III-nitride compound semiconductor films; we illustrate how this semiconductor alloy system can be used as a vehicle for illustrating basic concepts in practical quantum nanostructure engineering.  We then discuss a new class of two-dimensional semiconductors¾the transition-metal dichalcogenides¾that potentially offer new paradigms for device architectures.  Finally, we give examples of how semiconductor nanostructures are transitioned into practical technologies.

All welcome.