skip to content
Thursday, 22 February, 2018 - 11:00
Event Location: 

Goldsmiths Lecture Room 2

Matthew Smith, University of Glasgow

GaN high electron mobility transistors and associated monolithic microwave integrated circuits are a key enabling technology for high-efficiency military and civilian microwave systems. 5G communication, for example, will require a tremendous amount of power to be transferred at microwave frequencies, beyond the capability of current microwave devices. The GaN-DaME project, a collaborative effort including research teams from the Universities of Glasgow, Cambridge, Birmingham, Bristol and Cardiff, will develop proven GaN HEMT technologies with integrated diamond heat-spreading layers. This will dramatically improve on-chip RF power per unit area through extraction of self-generated heat, facilitating a disruptive change in system performance and enabling new architectures. Here I will provide an overview of the GaN-DaME process flow and describe logistics required to link the individual process modules, including wafer bonding, substrate removal and coupon production via dicing and etching.