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Prof M G Blamire and Dr J J W A Robinson

In the first half of this course, we will explore the materials developments which have enabled the global microelectronics industry to achieve unprecedented device size scaling over many decades. The materials which have formed the basis of this development have been chosen, not because of their performance in isolation, but how they can be integrated into inexpensive, high accuracy, manufacturing processes. The course will include an introduction to the basic properties of transistors and the standard processing techniques which are used for their fabrication and how these have developed to enable continued device size reductions.

The second half of this course begins by addressing the need to develop novel materials and devices for memory and logic processing for information communication technologies with a view of replacing semiconductor transistor based logic. The course then explores state-of-the-art techniques to characterise the performance and structure of materials and devices. The course will also cover important concepts in the field of spin-electronics such as spin-currents, spin-injection, spin accumulation and detection, and spin-dependent tunneling.

This lecture course will cover:

  • Introduction
  • Field Effect Transistors
  • Lithography
  • Semiconductors and Doping
  • Etching and CMP
  • CMOS Fabrication Process
  • The move to other materials
  • Micro Electro Mechanical Systems (MEMs)
  • Characterisation
  • Magnetic Devices
  • Tunneling Devices