The Cambridge Centre for Gallium Nitride is based in the Department of Materials Science and Metallurgy at the University of Cambridge. We are one of a small number of places in the world to have, in close proximity and on the same site, gallium nitride growth equipment, extensive advanced electron microscopy characterisation facilities, advanced x-ray diffraction characterisation facilities, atomic force microscopy, photoluminescence (PL) for measuring optical properties, Hall effect equipment for measuring electrical properties, and basic theory for understanding in detail physical properties. 

The heart of our GaN Centre is a new state-of-the-art Thomas Swan six two-inch wafer MOCVD growth system, which was established in collaboration with Thomas Swan Scientific Equipment Limited. The growth equipment is working extremely well and is producing world-class GaN-based materials and devices. Detailed structural characterisation is provided by a huge range of advanced electron microscopy and analysis equipment. For example we use HREM to measure layer widths to atomic precision, electron holography to measure internal electric fields across quantum wells, electron energy loss spectroscopy (EELS) to measure local concentrations of In in InGaN alloys (for example), advanced SEM to measure doping distributions, etc. We also have the latest advanced x-ray diffraction equipment to assess material quality, accurate In (say) concentrations, etc. 

Our research is at the cutting edge of GaN research world-wide and we have many exciting research projects under way. We have a strong collaboration with UMIST and University College London as well as with European Universities and a number of industries. Our research is financially supported by the Engineering and Physical Sciences Research Council (EPSRC), the European Union (IPAM Project), Thomas Swan and a range of other industries. 

The research team is undergoing significant growth as we move into exciting new GaN based research areas. We welcome new collaboration with universities and industries throughout the world, and we welcome new research students who want to apply to join our thriving research group. 

J. Appl. Phys. 98, 053509 (2005)
 

Highlighting threading dislocations in MOVPE-grown GaN using an in situ
treatment with SiH4 and NH3(R.A. Oliver et al)

Journal of Crystal Growth Volume 289, Issue 2, Pages 506-514 (2006)  

Electron-beam-induced strain within InGaN quantum wells: false "cluster" detection in the TEM (T.M. Smeeton et al.) 
Applied Physics Letters, Vol. 83, p. 5419 (2003) .

Media
An interview with Prof. Humphreys in Compound Semiconductor magazine. He discusses the recent history of the issue of indium clustering in quantum wells.
Full article (free registration required)

Photos
Group punting trip on 25/08/05 to mark Margaret Beeston's retirement.