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April, 2023

MoS2 nano-switches have shown superb ultralow switching energies without excessive leakage currents. However, the debate about the origin and volatility of electrical switching is unresolved due to the lack of adequate nanoimaging of devices in operando. Here, three optical techniques are combined to perform the first non-invasive in situ characterization of nanosized MoS2 devices. This study reveals volatile threshold resistive switching due to the intercalation of metallic atoms from electrodes directly between Mo and S atoms, without the assistance of sulfur vacancies. A “semi-memristive” effect driven by an organic adlayer adjacent to MoS2 is observed, which suggests that nonvolatility can be achieved by careful interface engineering. These findings provide a crucial understanding of nano-process in vertically biased MoS2 nanosheets, which opens new routes to conscious engineering and optimization of 2D electronics.

Figure caption: Spectroscopical in-operando analysis reveals the mechanism of electrical switching in MoS2 nanosheets.

Joanna Symonowicz, Dmitry Polyushkin, Thomas Mueller, Giuliana Di Martino, "Fully Optical in Operando Investigation of Ambient Condition Electrical Switching in MoS2 Nanodevices", Adv.Mater. 35 (2023) 2209968

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